transistor(npn) features z compliment to pxt8550 marking: y1 maximum ratings (t a =25 unless otherwise noted) symbol parameter value units v cbo collector-base voltage 40 v v ceo collector-emitter voltage 25 v v ebo emitter-base voltage 6 v i c collector current -continuous 1.5 a p c collector power dissipation 0.5 w t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =100ua, i e =0 40 v collector-emitter breakdown voltage v (br)ceo i c =0.1ma, i b =0 25 v emitter-base breakdown voltage v (br)ebo i e =100 a, i c =0 5 v collector cut-off current i cbo v cb =40v, i e =0 0.1 a emitter cut-off current i ceo v ce =20v, i e =0 0.1 a emitter cut-off current i ebo v eb =5v, i c =0 0.1 a h fe(1) v ce =1v, i c =100ma 85 400 dc current gain h fe(2) v ce =1v, i c =800ma 40 collector-emitter saturation voltage v ce(sat) i c =800ma, i b =80ma 0.5 v base-emitter saturation voltage v be(sat) i c =800ma, i b =80ma 1.2 v base-emitter voltage v be v ce =1v, i c =10ma 1 v base-emitter positive favor voltage v bef i b =1a 1.55 v transition frequency f t v ce =10v,i c =50ma,f=30mhz 100 mhz output capacitance c ob v cb =10v,i e =0,f=1mhz 15 pf classification of h fe(1) rank b c d d3 range 85-160 120-200 160-300 300-400 sot-89 1. base 2. collector 3. emitter pxt8 050 1 date:2011/05 www.htsemi.com semiconductor jinyu
pxt8 050 2 date:2011/05 www.htsemi.com semiconductor jinyu
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